JPS5859617A - 弾性表面波素子 - Google Patents
弾性表面波素子Info
- Publication number
- JPS5859617A JPS5859617A JP15759481A JP15759481A JPS5859617A JP S5859617 A JPS5859617 A JP S5859617A JP 15759481 A JP15759481 A JP 15759481A JP 15759481 A JP15759481 A JP 15759481A JP S5859617 A JPS5859617 A JP S5859617A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- surface acoustic
- acoustic wave
- layer
- aluminum nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 88
- 239000013078 crystal Substances 0.000 claims abstract description 85
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 43
- 239000010703 silicon Substances 0.000 claims abstract description 43
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 40
- 230000000644 propagated effect Effects 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 239000006185 dispersion Substances 0.000 abstract description 45
- 239000000758 substrate Substances 0.000 abstract description 31
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 abstract description 3
- 229910017083 AlN Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 49
- 230000008878 coupling Effects 0.000 description 17
- 238000010168 coupling process Methods 0.000 description 17
- 238000005859 coupling reaction Methods 0.000 description 17
- 238000001514 detection method Methods 0.000 description 7
- 239000010409 thin film Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 241000981595 Zoysia japonica Species 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 235000011293 Brassica napus Nutrition 0.000 description 1
- 240000008100 Brassica rapa Species 0.000 description 1
- 235000000540 Brassica rapa subsp rapa Nutrition 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 210000002816 gill Anatomy 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15759481A JPS5859617A (ja) | 1981-10-05 | 1981-10-05 | 弾性表面波素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15759481A JPS5859617A (ja) | 1981-10-05 | 1981-10-05 | 弾性表面波素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5859617A true JPS5859617A (ja) | 1983-04-08 |
| JPH025330B2 JPH025330B2 (en]) | 1990-02-01 |
Family
ID=15653119
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15759481A Granted JPS5859617A (ja) | 1981-10-05 | 1981-10-05 | 弾性表面波素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5859617A (en]) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0388406A (ja) * | 1989-04-11 | 1991-04-12 | Sanyo Electric Co Ltd | 弾性表面波素子 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04207106A (ja) * | 1990-11-30 | 1992-07-29 | Kubota Corp | 乗用型芝刈機 |
-
1981
- 1981-10-05 JP JP15759481A patent/JPS5859617A/ja active Granted
Non-Patent Citations (1)
| Title |
|---|
| NATIONAL TECHNICAL REPORT=1976 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0388406A (ja) * | 1989-04-11 | 1991-04-12 | Sanyo Electric Co Ltd | 弾性表面波素子 |
| US5059847A (en) * | 1989-04-11 | 1991-10-22 | Sanyo Electric Co., Ltd. | Surface acoustic wave device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH025330B2 (en]) | 1990-02-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0218614B2 (en]) | ||
| US5446330A (en) | Surface acoustic wave device having a lamination structure | |
| US6420820B1 (en) | Acoustic wave resonator and method of operating the same to maintain resonance when subjected to temperature variations | |
| JP3435789B2 (ja) | 表面弾性波素子 | |
| JPS5863214A (ja) | 表面弾性波素子 | |
| CN106921363B (zh) | 一种薄膜体声波谐振器 | |
| US10951193B2 (en) | Elastic wave device | |
| JPS60210018A (ja) | 薄膜圧電振動子 | |
| JPH11274883A (ja) | 圧電体複合基板および表面弾性波素子 | |
| JPS6341449B2 (en]) | ||
| KR20030059076A (ko) | 음향 또는 열 신호와 전기 전압 변화치를 상호 간에변환시키기 위한 적층체를 갖는 반도체 부품 및 그 제조방법 | |
| JPS5859617A (ja) | 弾性表面波素子 | |
| JPS5859616A (ja) | 弾性表面波素子 | |
| JPH0249566B2 (en]) | ||
| JPS5864815A (ja) | 弾性表面波素子 | |
| JP3449013B2 (ja) | 横波トランスデューサ | |
| JPH0213853B2 (en]) | ||
| JP3493315B2 (ja) | 圧電共振子 | |
| JPS5941602B2 (ja) | 表面弾性波素子 | |
| JPS58156215A (ja) | 弾性表面波素子 | |
| JP2003273691A (ja) | 表面弾性波素子 | |
| JPH01103310A (ja) | 表面弾性波素子 | |
| US20250113738A1 (en) | Semiconductor structure and manufacturing method thereof | |
| JPH0247888B2 (ja) | Danseihyomenhasoshi | |
| CN103985949B (zh) | 高频体声波延迟线换能器制备方法及高频体声波延迟线 |